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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309A3-R Issued Date : 2003.10.15
Revised Date : 2004.04.02 Page No. : 1/4
BTA1759A3
Description
* High breakdown voltage. (BVCEO=-400V) * Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA. * Wide SOA (safe operation area). * Complementary to BTC4505A3.
Symbol
BTA1759A3
Outline
TO-92
BBase CCollector EEmitter
EBC
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -7 -300 625 150 -55~+150 Unit V V V mA mW C C
BTA1759A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) *hFE fT Cob Min. -400 -400 -7 100 Typ. -0.08 12 13 Max. -10 -20 -10 -0.5 -1.2 270 Unit V V V A nA A V V MHz pF
Spec. No. : C309A3-R Issued Date : 2003.10.15
Revised Date : 2004.04.02 Page No. : 2/4
Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-400V VCE=-300V, REB=4k VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
BTA1759A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 VCE=10V Current Gain---HFE Current Gain---HFE 1000
Spec. No. : C309A3-R Issued Date : 2003.10.15
Revised Date : 2004.04.02 Page No. : 3/4
Current Gain vs Collector Current
VCE=6V
100
100
10 0.1 1 10 Collector Current---IC(mA) 100
10 0.1 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
1 VCE(sat)@IC=10IB Saturation Voltage---(V) Saturation Voltage---(V) 1
Saturation Voltage vs Collector Current
VBE(sat@IC=10IB
0.1
0.01 1 10 Collector Current---IC(mA) 100
0.1 0.1 1 10 100 Collector Current---IC(mA)
On Voltage vs Collector Current
0.8 0.7 0.6 On Voltage---(V) 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 100 Collector Current---IC(mA) VBE(on)@VCE=3V
Power Derating Curve
700 Power Dissipation---PD(mW) 600 500 400 300 200 100 0 0 50 100 150 Ambient Temperature---TA() 200
BTA1759A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Spec. No. : C309A3-R Issued Date : 2003.10.15
Revised Date : 2004.04.02 Page No. : 4/4
A B
1 2 3
2
Marking:
A1759
3
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1759A3
CYStek Product Specification

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